Part Number Hot Search : 
TA123 1N6132A 60N25 D391K VSKDU162 MP12XX ON0214 4511GM
Product Description
Full Text Search

RN2112FT - IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2112FT_379117.PDF Datasheet

 
Part No. RN2112FT RN2113FT
Description IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

File Size 72.56K  /  3 Page  

Maker

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: RN2111
Maker: 35(1.6MM..
Pack:
Stock: Reserved
Unit price for :
    50: $0.03
  100: $0.03
1000: $0.03

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ RN2112FT RN2113FT Datasheet PDF Downlaod from Datasheet.HK ]
[RN2112FT RN2113FT Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for RN2112FT ]

[ Price & Availability of RN2112FT by FindChips.com ]

 Full text search : IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)


 Related Part Number
PART Description Maker
VIO125-12P1 VID125-12P1 VDI125-12P1 IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
IXYS[IXYS Corporation]
IXYS, Corp.
CM300DY-12H IGBT Modules: 600V
Mitsubishi Electric Corporation
CM600HA-12H IGBT Modules: 600V
Mitsubishi Electric Corporation
CM75DU-12H IGBT Modules: 600V
Mitsubishi Electric Corporation
CM400HA-12H IGBT Modules: 600V
Mitsubishi Electric Corporation
CM400DU-12H IGBT Modules: 600V
Mitsubishi Electric Corporation
CM50DY-12H IGBT Modules: 600V
Mitsubishi Electric Corporation
CM75TU-12F IGBT Modules: 600V
Mitsubishi Electric Corporation
PM30RHC060 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)
Intellimod-3 Modules: Three Phase Brake, IGBT Inverter Output 30 Amp, 110-230 Volt Line
Powerex Power Semiconductors
CM150DU-12H IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
2ED020I12-F Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
eupec GmbH
 
 Related keyword From Full Text Search System
RN2112FT Electronics RN2112FT 资料查找 RN2112FT filetype:pdf RN2112FT microchip RN2112FT analog devices
RN2112FT Search RN2112FT MARKING RN2112FT Stmicroelectronic RN2112FT Mosfet RN2112FT quad op amp
 

 

Price & Availability of RN2112FT

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.1802179813385